SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BC807A.
MAXI...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BC807A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage Collector-Emitter
Voltage
VCBO VCEO
50 45
Emitter-Base
Voltage
VEBO
5
Collector Current
IC 500
Emitter Current
IE -500
Collector Power Dissipation
PC* 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT V V V mA mA mW
BC817A
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation
Voltage Base-Emitter
Voltage Transition Frequency
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT
VCB=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=500mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
MIN. -
100 40 100 -
TYP. 5
MAX. 0.1 0.1 630 0.7 1.2 -
UNIT A A
V V MHz pF
MARK SPEC TYPE MARK
BC817A-16 2M
BC817A-25 2N
BC817A-40 2P
Marking
Type ...