BC318C — PNP Epitaxial Silicon Transistor
September 2007
BC318C PNP Epitaxial Silicon Transistor
• This device is desi...
BC318C — PNP Epitaxial Silicon Transistor
September 2007
BC318C PNP Epitaxial Silicon Transistor
This device is designed for general purpose amplifier application at collector currents to 800mA. Sourced from process 38.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC TJ, TSTG Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Operating and Storage Junction Temperature Range
Parameter
Value
30 20 5 100 -55 ~ 150
Units
V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
Ta=25°C unless otherwise noted
Parameter
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max.
625 5.0 83.3 200
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO BVCES ICBO hFE VCE(sat) VBE(on) Ccb
Parameter
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Collector Cut-off Current DC Current ...