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Manufacture Part Number Description Mobile PC
Fairchild Semiconductor
Fairchild Semiconductor
BC808 PNP Epitaxial Silicon Transistor

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General Semiconductor
General Semiconductor
BC808 Small Signal Transistors (PNP)

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AUK corp
AUK corp
BC808 PNP Silicon Transistor (High current application Switching application)
Semiconductor

BC808
PNP Silicon Transistor

Descriptions
• High current application • Switching application

Features
• Suitable for AF-Driver stage and low power output stages • Complementary pair with BC818

Ordering Information
Type NO. BC808 Marking MA : hFE rank Package Code SOT-23

Outline Dimensions
2.4±0.1 1.30±0.1

unit : mm

1
1.90 Typ.

3 2
0.4 Typ. 0.45~0.60

0.2 Min.

2.9±0.1

1.12 Max.

0~0.1

KST-2025-000

0.124

PIN Connections 1. Base 2. Emitter 3. Collector

0.38

-0.03 +0.05

1

BC808
(Ta=25°C)

Absolute maximum ratings
Characteristic
Collector-Base voltage Coll
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Infineon Technologies AG
Infineon Technologies AG
BC808 PNP Silicon AF Transistors
BC807, BC808
PNP Silicon AF Transistors
 For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Comlementary types: BC817, BC818 (NPN)

3

2 1
VPS05161

Type BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40
Maximum Ratings Parameter

Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs 1=B 1=B 1=B 1=B 1=B 1=B

Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C

Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

Symbol VCEO VCBO VEBO

BC807 45 50 5 500 1 100 200 330 150

BC808 25 30 5

Unit V

Collector-emitter voltage Collector-base volt
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Diotec Semiconductor
Diotec Semiconductor
BC808 Surface mount Si-Epitaxial PlanarTransistors
BC807 / BC808

BC807 / BC808

PNP

Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Version 2015-05-12

2.9 ±0.1

0.4+0.1 -0.05

3

Type Code

2.4 ±0.2 1.3±0.1

1.1+0.1 -0.2

Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca.

12
1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C

Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle

PNP
310 mW SOT-23 (TO-236) 0.01 g

Max
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UTC
UTC
BC808 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD

BC807/BC808

PNP SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS

 FEATURES
* Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818

 ORDERING INFORMATION

Ordering Number

Package

Note:

BC807G-xx-AE3-R BC807G-xx-AL3-R BC808G-xx-AE3-R BC808G-xx-AL3-R Pin Assignment: C: Collector B: Base

SOT-23 SOT-323 SOT-23 SOT-323 E: Emitter

Pin Assignment 123 EBC EBC EBC EBC

Packing
Tape Reel Tape Reel Tape Reel Tape Reel

 MARKING
807-16
808-16 9GAG

807-25 808-25

www.unisonic.com.tw Copyright © 2014 Unisonic Technol
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Guangdong Kexin Industrial
Guangdong Kexin Industrial
BC808 PNP Silicon AF Transistors


SMD Type
PNP Silicon AF Transistors KC808(BC808)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1

Transistors

Unit: mm

Features
+0.1 2.4-0.1

High collector current. High current gain. Low collector-emitter saturation voltage.

+0.1 1.3-0.1

1
+0.1 0.95-0.1 +0.1 1.9-0.1

2

0.55

0.4

3

+0.05 0.1-0.01

+0.1 0.97-0.1

1.Base 2.Emitter 3.collector

Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 
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CDIL
CDIL
BC808 SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package

BC807 BC808

SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor

Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2

ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f =
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SEMTECH
SEMTECH
BC808 PNP Silicon Epitaxial Planar Transistors
BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range

BC807 BC808
BC807 BC808

Symbol
-VCBO
-VCEO -
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LITE-ON
LITE-ON
BC808 PNP General Purpose Transistor
PNP General Purpose Transistor

BC808

FEATURES
• Suitable for AF-Driver stages and low power output
stages
MECHANICAL DATA
• Case: SOT-23 Plastic • Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free in RoHS 2002/95/EC Compliant

Maximum Ratings @ TA = 25℃
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range

Symbol
VCBO VCEO VEBO
IC PC TJ TSTG

Electrical Characteristics @ TA = 25℃ unles
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