www.DataSheet4U.com
SMD Type
PNP Silicon AF Transistors KC807A(BC807A)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
U...
www.DataSheet4U.com
SMD Type
PNP Silicon AF Transistors KC807A(BC807A)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
Features
For general AF applications. High collector current. High current gain. Low collector-emitter saturation
voltage.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating -50 -45 -5 -500 -1 -100 310 150 -65 to +150 Unit V V V mA A mA mW
Electrical Characteristics Ta = 25
Parameter Collector-to-base breakdown
voltage Collector-to-emitter breakdown
voltage Emitter-to-base breakdown
voltage Collector cutoff current Emitter cutoff current KC807A-16 DC current gain * Collector saturation
voltage * Base to emitter
voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC807A-25 KC807A-40 VCE(sat) IC = -500 mA, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA CCb Ceb fT VCB = -10 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz IC = -50 mA, VCE = -5 V, f = 100 MHz 10 60 200 hFE IC = -100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = -10 Testconditons A, IE = 0 Min -50 -45 -5 -100 -50 -100 100 160 250 160 250 350 250 400 630 -0.7 -1.2 V V ...