BC639-16

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation Derate above 25°C @ TA = 25°C VEBO IC PD 5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended O...