BC 617 BC 618
NPN Silicon Darlington Transistors
BC 617 BC 618
High current gain q High collector current
q
2 1 3
T...
BC 617 BC 618
NPN Silicon Darlington Transistors
BC 617 BC 618
High current gain q High collector current
q
2 1 3
Type BC 617 BC 618
Marking –
Ordering Code Q62702-C1137 Q62702-C1138
Pin Configuration 1 2 3 C B E
Package1) TO-92
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 617 40 50
BC 618 55 80 12 500 800 100 200 625 150
Unit V
mA
mW ˚C
– 65 … + 150
200 135
K/W
1) 2)
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 617 BC 618
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage IC = 10 mA BC 617 BC 618 Collector-base breakdown
voltage IC = 100 µA BC 617 BC 618 Emitter-base breakdown
voltage IE = 10 µA Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 5 V1) IC = 200 mA; VCE = 5 V1) IC = 1000 mA; VCE = 5 V1) BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 VCEsat VBEsat BC 617 BC 618 BC 617 BC 618 IEB0 hF...