BC550

NPN Epitaxial Silicon Transistor BC546 / BC547 / BC548 / BC549 / BC550 Features Switching and Amplifier High−Voltage: BC546, VCEO = 65 V Low−Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and BC560 These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector−Base Voltage BC546 BC547 / BC550 BC548 / BC549 VCBO V 80 50 30 Collector−Emitter Voltage BC546 BC547 / BC550 BC548 / BC549 VCEO V 65 45 30 Emitter−Base Voltage BC546 / BC547 VEBO BC548 / BC549 / BC550 V 6 5 Collector Current (DC) IC 100 mA Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com 123 TO−92 CASE 135AN TO−92 CASE 135AR 1 2 3 1. Collector 2. Base 3. Emitter MARKING DIAGRAM ABC 5xyz YWW BC5xyz x y z A Y WW = Device Code = 4 or 5 = 6, 7, 8, 9 or 0 = A, B, C = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2002 1 August, 2021 − Rev. 4 Publication Order Number: BC550/D BC546 / BC547 / BC548 / BC549 / BC550 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test C...