BC516

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors PNP Darlington transistor Product specification BC516 FEATURES High current (max. 500 mA) Low voltage (max. 30 V) Very high DC current gain (min. 30000). APPLICATIONS Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage 1 2 3 23 TR1 TR2 1 MAM303 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb PARAMETER CONDITIONS collector-base voltage (open emitter) open emitter collector-emitter voltage emitter-base voltage VBE = 0 open collector collector current (DC) peak collector current base current (DC) total power dissipation storage temperature Tamb ≤ 25 °C; note 1 junction temperature operating ambient temperature Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − − −65 − −65 MAX. −40 −30 −10 −500 −800 −100 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 23 2 Philips Semiconductors PNP Darlington transistor Product specification BC516 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient note...