BAV70-V

BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual www.datasheet4u.com Features Silicon Epitaxial Planar Diode Fast switching dual diode with common e3 cathode This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual common anode with type designation BAW56-V, and a single diode with type designation BAL99-V. Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002-96/EC 3 1 2 18108 Mechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAV70-V Ordering code BAV70-V-GS18 or BAV70-V-GS08 JJ Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage, peak reverse voltage Forward current (continuous) Non repetitive peak forward current tp = 1 µs tp = 1 ms tp = 1 s Power dissipation 1) Test condition Symbol VR, VRM IF IFSM IFSM IFSM Ptot Value 70 250 2 1 0.5 3501) Unit V mA A A A mW Device on fiberglass substrate, see layout Document Number 85546 Rev. 1.7, 09-Mar-06 www.vishay.com 1 BAV70-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Symbol RthJA Tj Tj = Tstg Value 4301) 150 - 65 to + 150 Unit °C/W °C °C www.datasheet4u.com Junct...