DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV199 Low-leakage double diode
Product data sheet Supersedes ...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV199 Low-leakage double diode
Product data sheet Supersedes data of 1999 May 11
2001 Oct 12
NXP Semiconductors
Low-leakage double diode
Product data sheet
BAV199
FEATURES
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse
voltage:
max. 75 V Repetitive peak reverse
voltage:
max. 85 V Repetitive peak forward current:
max. 500 mA.
MARKING
TYPE NUMBER BAV199
MARKING CODE(1)
JY∗
Note
1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China.
PINNING
PIN DESCRIPTION 1 anode 2 cathode 3 anode; cathode
APPLICATION Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series.
handbook, 4 columns
2
1
Top view
3
21 3
MAM107
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VRRM VR IF
repetitive peak reverse
voltage continuous reverse
voltage continuous forward current
IFRM
repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation Tstg storage temperature Tj junction temperature
single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2
square wave; Tj = 25 °C prior to surge; see Fig.4
tp = 1 µs tp = 1 ms tp = 1...