Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current •...
Medium Power AF Schottky Diode Forward current: 0.5 A Reverse
voltage: 30 V Low capacitance, low reverse current For high efficiency DC/DC conversion,
fast switching, protecting and clamping applications Pb-free (RoHS compliant) package Qualified according AEC Q101
BAS3005B-02LRH* BAS3005B-02V
BAS3005B....
Type BAS3005B-02LRH* BAS3005B-02V
*Preliminary
Package TSLP-2-17 SC79
Configuration single, leadless single
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse
voltage1)
VR
RMS reverse
voltage Forward current1)
VR(RMS) IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.25)
IFRM
Non-repetitive peak surge forward current (t ≤ 10ms)
IFSM
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg
1
Marking 5B 3
Value
Unit
30
V
-
500
mA
500
3.5
A
5
150 -55 ...125 -65 ...150
°C 2012-07-02
BAS3005B....
1For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value ≤ 80
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current1)
IR
µA
VR = 5 V
-
1
5
VR = 10 V
-
2
10
VR = 30 V
-
5
25
Forward
voltage1)...