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BAS20W

Taiwan Semiconductor

Switching Diode

Small Signal Product BAS19W/20W/21W Taiwan Semiconductor SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switc...


Taiwan Semiconductor

BAS20W

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Description
Small Signal Product BAS19W/20W/21W Taiwan Semiconductor SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switching Speed - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA - Case: SOT-323 package - High temperature soldering guaranteed: 260°C/10s - Weight: 5mg (approximately) APPLICATION - General purpose switching application SOT-323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER VALUE SYMBOL BAS19W BAS20W BAS21W Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Output Currect Power Dissipation Thermal Resistance form Junction to Ambient Junction Temperature Storage Temperature Range VRRM VR IO PD RθJA TJ TSTG 100 150 250 100 150 250 200 200 625 125 - 55 to + 150 UNIT V V mA mW oC/W oC oC PARAMETER BAS19W Reverse Breakdown Voltage BAS20W BAS21W BAS19W Reverse Voltage Leakage Current BAS20W BAS21W Forward Voltage Diode Capacitance Reverse Recovery Time TEST CONDITION at IR = 100 µA at VR = 100 V at VR = 150 V at VR = 200 V at IF = 30 mA at IF = 100 mA VR=0V, f=1.0MHz at IF= IR=30mA , Irr=0.1xIR SYMBOL V(BR) IR VF CD trr MIN 100 150 250 ---- --- MAX 0.1 1 1.25 5 50 UNIT V µA V pF ns Document Number: DS_S1405006 Version: B14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Forward Current (mA) 1000 200 100 10 1 0.1 0.01 0 Fig.1 Typical Forward Characteristics Ta=100°C Ta=25°C 1000 100 10 ...




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