BAS20

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED DIODES 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 12 BAS19, BAS20, BAS21 SOT-23 Formed SMD Package Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Non Repetitive Peak Forward Current t=1µs t=1s IFSM IFSM Average Rectified Forward Current (averaged over any 20 ms period) IF (AV) Forward Current (DC) Repetitive Peak Forward Current Total Power Dissipation *IF IFRM PD Storage Temperature Range Junction Temperature Tstg Tj BAS19 100 120 BAS20 150 200 2.5 0.5 200 200 625 250 - 55 to +150 150 BAS21 200 250 UNIT V V A A mA mA mA mW oC oC Thermal Resistance Junction to Ambient in free air Rth (j-a) 500 K/W ELECTRICAL CHARACTERISTICS DESCRIPTION Forward Voltage Reverse Breakdown Voltage (Ta=25º C unless specified otherwise) SYMBOL TEST CONDITION VF V(BR)R IF=100mA IF=200mA IR=100µA **BAS19 BAS20 ***BAS21 MIN TYP MAX 1.00 1.25 120 200 250 UNIT V V V V V *Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm **Measured under pulse conditions; pulse time = tp=0.3ms. ***At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V BAS19_21 Rev_1 050503E Continental Device India Limited Data Sheet Page 1 o...