BAR64V-02V

VISHAY BAR64V-02V Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case (SOD 523) Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for this PIN Diode are switches and attenuators in wireless, mobile and TVsystems. C 16863 Applications For frequency up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile , wireless and TV-Applications Features High reverse Voltage Space saving SOD523 package with low series inductance Small reverse capacitance High breakdown voltage Parts Table Part BAR64V-02V Ordering code BAR64V-02V-GS08 D Marking Remarks Tape and Reel Package SOD523 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Sub type Symbol VR IF Tj Tstg Value 100 100 150 - 55 to + 150 Unit V mA °C °C Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction soldering point Test condition Symbol RthJS Value 100 Unit K/W Electrical Characteristics Tamb = 25 °C, unless otherwise ...