BA484

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes FEATURES Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.0 to 1.6 pF Low diode forward resistance: max. 0.7 to 1.2 Ω. The diodes are type branded. BA482; BA483; BA484 DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. k handbook, halfpage a MAM156 APPLICATION VHF television tuners. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 35 100 +150 150 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tamb = 75 °C Cd diode capacitance BA482 BA483 BA484 rD diode forward resistance BA482 BA483 BA484 IF = 3 mA; f = 200 MHz; see Fig.5 0.6 0.8 0.8 0.7 1.2 1.2 Ω Ω Ω f = 1 to 100 MHz; VR = 3 V; see Fig.4 0.8 0.7 1.0 1.2 1.0 1.6 pF pF pF − − 100 1 nA µA CONDITIONS IF = 100 mA; see Fig.2 TYP. − MAX. 1.2 V UNIT 1996 Apr 17 2 Philips Semiconductors Product specification Band-switching di...