BA481

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D050 BA481 UHF mixer diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification UHF mixer diode FEATURES Low forward voltage Hermetically-sealed leaded glass package Low diode capacitance. APPLICATIONS UHF mixer Sampling circuits Modulators Phase detection. Cathode indicated by a grey band. k handbook, halfpage a BA481 DESCRIPTION Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. MAM193 Fig.1 Simplified outline (SOD68; DO-34), and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER − − −65 − MIN. 4 30 +125 100 MAX. V mA °C °C UNIT 1996 Mar 19 2 Philips Semiconductors Product specification UHF mixer diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF forward voltage PARAMETER see Fig.2 IF = 1 mA IF = 10 mA IR rs F Cd Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD68 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 320 reverse current series res...