DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA316; BA317; BA318 High-speed diodes
Product specification Supersedes data ...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA316; BA317; BA318 High-speed diodes
Product specification Supersedes data of April 1996 1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application Continuous reverse
voltage: 10 V, 30 V, 50 V Repetitive peak reverse
voltage: max. 15 V, 40 V, 60 V Repetitive peak forward current: max. 225 mA.
The diodes are type branded.
handbook, halfpage k
BA316; BA317; BA318
DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
a
MAM246
APPLICATIONS High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BA316 BA317 BA318 VR continuous reverse
voltage BA316 BA317 BA318 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 350 +200 200 A A A mW °C °C see Fig.2; note 1 − − − − − 10 30 50 100 225 V V V mA mA PARAMETER repetitive peak reverse
voltage ...