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BA316 Datasheet

Part Number BA316
Manufacturers NXP
Logo NXP
Description High-speed diodes
Datasheet BA316 DatasheetBA316 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: 10 V, 30 V, 50 V • Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V • Repetitive peak forward current: max. 225 mA. The diodes are .

  BA316   BA316






Part Number BA318
Manufacturers NXP
Logo NXP
Description High-speed diodes
Datasheet BA316 DatasheetBA318 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: 10 V, 30 V, 50 V • Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V • Repetitive peak forward current: max. 225 mA. The diodes are .

  BA316   BA316







Part Number BA3170
Manufacturers Rohm
Logo Rohm
Description Trickle-charge IC for two-cell/ lithium-ion batteries
Datasheet BA316 DatasheetBA3170 Datasheet (PDF)

Regulator ICs Trickle-charge IC for two-cell, lithium-ion batteries BA3170 The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status. FApplications Lithium-ion (two cell) battery chargers, and charging circuits FFeatures 1) Output voltage can be varied using an external resistor. 2) The output pin is PNP output with low saturation voltage. 3) Built-in out.

  BA316   BA316







Part Number BA317
Manufacturers NXP
Logo NXP
Description High-speed diodes
Datasheet BA316 DatasheetBA317 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: 10 V, 30 V, 50 V • Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V • Repetitive peak forward current: max. 225 mA. The diodes are .

  BA316   BA316







Part Number BA315
Manufacturers NXP
Logo NXP
Description Low-voltage stabistor
Datasheet BA316 DatasheetBA315 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA315 Low-voltage stabistor Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistor FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection. LIM.

  BA316   BA316







High-speed diodes

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: 10 V, 30 V, 50 V • Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V • Repetitive peak forward current: max. 225 mA. The diodes are type branded. handbook, halfpage k BA316; BA317; BA318 DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. a MAM246 APPLICATIONS • High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BA316 BA317 BA318 VR continuous reverse voltage BA316 BA317 BA318 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 350 +200 200 A A A mW °C °C see Fig.2; note 1 − − − − − 10 30 50 100 225 V V V mA mA PARAMETER repetitive peak reverse voltage .


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