BA278

DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Band-switching diode Preliminary specification BA278 FEATURES Small plastic SMD package Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.2 pF Low diode forward resistance: max. 0.7 Ω. APPLICATIONS Low loss band switching in VHF television tuners. Surface mount band-switching circuits. DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523V SMD package. PINNING PIN DESCRIPTION 1 ;2 handbook, halfpa1ge 1 cathode anode 22 Top Tvoiepwview MAM399 MBK258 Marking code: Fig.1 Simplified outline (SOD523V) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS Ts = 90 °C MIN. − − − −65 −65 MAX. 35 100 715 +150 +150 UNIT V mA mW °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IR reverse current Cd diode capacitance rD diode forward resistance IF = 10 mA VR = 25 V VR = 20 V; Tamb = 75 °C f = 1 MHz; VR = 6 V; note 1; see Fig.2 IF = 2 mA; f = 100 MHz; note 1; see Fig.3 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. MAX. 1 50 1 1.2 0.7 UNIT V nA µA...