BA1283

BA1282.BA1283 Vishay Telefunken Silicon Planar Diodes Features D D D D Saving space Hermetic sealed parts Fits onto SOD 323 footprints Electrical data identical with the devices BA682.BA683 / BA982.BA983 96 12315 D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150 –55...+150 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy–glass hard tissue, Fig. 1 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Unit K/W Document Number 85525 Rev. 2, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BA1282.BA1283 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100mA VR=20V f=100MHz, VR=1V f=100MHz, VR=3V f=100MHz, VR=3V f=200MHz, IF=3mA f=200MHz, IF=3mA f=200MHz, IF=10mA f=200MHz, IF=10mA Type Symbol VF IR CD CD CD rf rf rf rf Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V nA pF pF pF Differential forward resistance BA1282 BA1283 BA1282 BA1283 BA1282 BA1283 W W W W Characteristics (Tj = 25_C unless otherwise specified) rf – Differential Forward Resistance (W ) 100 CD – Diode Capacitance ( pF ) f = 200 MHz Tj = 25°C 10 3.0 2.5 2.0 1.5 BA1282...