BA01207 Datasheet - GaAs HBT HYBRID IC

MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC D...

MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC DESCRIPTION The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND FEATURES Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input* and output matching *Use DC block for input port 2 3 1.45 APPLICATION N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is OQPSK) hand set. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp. Condition ZG=ZL=50Ω Ratings* 6 7 -20 ∼ +85 -30 ∼ +125 Unit V dBm °C °C *Note : Each maximum rating is guaranteed independently . www.DataSheet4U.com ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50Ω) Limits Symbol f Iq Ict *1 4.5 Parameter Frequency Quiescent current Total current Total current Power added efficiency Power Gain Adjacent channel power at 900KHz Adjacent channel power at 1.98MHz 2nd harmonics 3rd harmonics Noise in RX band Total current Total current Power Gain Adjacent channel power at 900KHz Test conditions Unit MAX 925 70 420 10 -47 -57 -27 -30 -135 122 5.5 -47 -58 MHz mA mA mA % dB dBc dBc dBc dBc dBm/Hz mA mA dB dBc dBc MIN 887 TYP 55 395 5.3 40 27.5 -50 -60 -30 -45 -138 107 2.5 24 -55 -66 Vc=3.5V,Vcb=Vref=2.8V No Signal Po=27.5dBm (IS-95B) Vc1=Vc2=...