B968

Power Transistors 2SB968 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features q Possible to solder the radiation fin directly to printed cicuit board q High collector to emitter VCEO q Large collector power dissipation PC s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –50 –40 –5 –3 –1.5 20 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat) VBE(sat) fT Cob VCB = –20V, IE = 0 VCE = –10V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –2mA, IB = 0 VCE = –5V, IC = –1A IC = –1.5A, IB = – 0.15A IC = –2A, IB = – 0.2A VCB = –5V, IE = 0.5A, f = 200MHz VCB = –20V, IE = 0, f = 1MHz 2.5±0.1 0.8max 1.0±0.2 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 123 6.5±0.2 5.35 4.35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm 5.5±0.2 1.8 13.3...