2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
Application
• Low frequency high voltage amplifier • Complementary pair w...
2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
Application
Low frequency high
voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756A
Outline
TO-92MOD
3 2 1
1. Emitter 2. Collector 3. Base
2SB715, 2SB716, 2SB716A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
2SB715 –100 –100 –5 –50 750 150 –55 to +150
2SB716 –120 –120 –5 –50 750 150 –55 to +150
2SB716A –140 –140 –5 –50 750 150 –55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SB715
2SB716
2SB716A
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V(BR)CBO –100 — — –120 — — –140 — — V IC = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO –100 — — –120 — — –140 — — V IC = –1 mA, RBE = ∞
Collector cutoff current ICBO
— — –0.5 — — — — — — µA VCB = –80 V, IE = 0
— — — — — –0.5 — — –0.5 µA VCB = –100 V, IE = 0
DC current transfer ratio hFE1*1 250 — 800 250 — 800 250 — 500
VCE = –12 V, IC = –2 mA
hFE2 125 — — 125 — — 125 — —
VCE = –12 V, IC = –10 mA
Base to emitter
voltage VBE
— — –0.75 — — –0.75 — — –0.75 V
VCE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
VCE(sat) — — –0.2 — — –0.2 — — –0.2 V
IC = –10 mA, IB = –1 mA
Gain bandwidth product fT
— 150 —
— 150 —
— 150 —
MHz VCE = –1...