SavantIC Semiconductor
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Product Specification
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Silicon PNP Power Transistors
2S...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
www.DataSheet4U.com
Silicon PNP Power Transistors
2SB337
DESCRIPTION ·With TO-3 package ·Low collector saturation
voltage APPLICATIONS ·For audio frequency power output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC-55 CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -10 -7 7 -1 30 100 -55~100 UNIT V V V A A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
www.DataSheet4U.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB337
SYMBOL
MAX
UNIT
V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE
Collector-emitter breakdown
voltage
IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-4A; IB=-0.4A IC=-1A ;VCE=-2V VCB=-30V; IE=0 VEB=-10V; IE=0 IC=-1A ; VCE=-2V
-30
V
Emitter-base breakdown
voltage
-10
V
Collector-emitter saturation
voltage
-0.29
V
Base-emittter on
voltage
-0.38
V
Collector cut-off current
-0.1
mA
Emitter cut-off current
-0.1
mA
DC current gain
50
90
165
hFE Classifications A 50-100 B 80-165
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification...