B1624

(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1624 –110 –110 –5 –6 –1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1624 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1624 –100max –100max –110min 5000min∗ –2.5max –3.0max 100typ 110typ V V MHz pF 20.0min 4.0max 3 B Equivalent circuit C www.DataSheet4U.com Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2493) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 1.8 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 2.0 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –6 A –5m A m 5mA –1 –0. A .4m –0 –0 .3 m A V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –6 (V C E =–4V) Collector Current I C (A) –0. 2m A –4 Collector Current I C (A) –2 –5A –4 ) –30 ˚C ( Tem (C...