Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2340...
Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2340
Unit: mm
15.0±0.5 13.0±0.5 4.5±0.2
M Di ain sc te on na tin nc ue e/ d
4.0±0.1
s Features
q q q
10.5±0.5
4.0±0.1
2.0±0.1
Parameter
Symbol VCBO VCEO VEBO ICP IC
Ratings –130 –110 –5
Unit V V V A A
12.5
s Absolute Maximum Ratings
Collector to base
voltage
(TC=25˚C)
Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current
Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
PC Tj
Tstg
–55 to +150
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
(TC=25˚C)
ue
Symbol
ICBO ICEO IEBO hFE1
e/
Collector to emitter
voltage
VCEO hFE2*
te na
Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
M ain
VCE(sat) VBE(sat) fT ton tstg tf
Pl
*h
FE2
Rank classification
Q S P
Rank hFE2
5000 to 15000 7000 to 21000 8000 to 30000
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15.0±0.2
φ3.2±0.1
Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low colle...
