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B1499 Datasheet

Part Number B1499
Manufacturers Panasonic
Logo Panasonic
Description Silicon PNP epitaxial planar type Power Transistors
Datasheet B1499 DatasheetB1499 Datasheet (PDF)

Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmationS.o1l8d.e0r±0D.i5pDisMcaionnttiennuaendc Power Transistors 2SB1499, 2SB1499A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings .

  B1499   B1499






Part Number B1499A
Manufacturers Panasonic
Logo Panasonic
Description Silicon PNP epitaxial planar type Power Transistors
Datasheet B1499 DatasheetB1499A Datasheet (PDF)

Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmationS.o1l8d.e0r±0D.i5pDisMcaionnttiennuaendc Power Transistors 2SB1499, 2SB1499A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings .

  B1499   B1499







Part Number B1490
Manufacturers Panasonic
Logo Panasonic
Description 2SB1490
Datasheet B1499 DatasheetB1490 Datasheet (PDF)

Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm (10.0) (6.0) (2.0) (4.0) For power amplification Complementary to 2SD2250 ■ Features • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Co.

  B1499   B1499







Silicon PNP epitaxial planar type Power Transistors

Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmationS.o1l8d.e0r±0D.i5pDisMcaionnttiennuaendc Power Transistors 2SB1499, 2SB1499A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SB1499 base voltage 2SB1499A VCBO –60 –80 Collector to 2SB1499 emitter voltage 2SB1499A VCEO –60 –80 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC –5 –8 –4 15 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 13.0±0.2e/ 4.2±0.2 2.5±0.2 Unit: mm 10.0±0.2 5.0±0.1 1.0 90° 0.35±0.1 1.2±0.1 0.65±0.1 1.05±0.1 0.55±0.1 C1.0 2.25±0.2 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current 2SB1499 ICES 2SB1499A Collector cutoff current 2SB1499 ICEO 2SB1499A Emitter cutoff current Collector to emitter 2SB1499 voltage 2SB1499A IEBO VCEO Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time hFE1* .


2015-12-21 : LSD230DEG-10    LSD230AEG-10    LSD230BEG-10    PA210BC    2SB1499    B1499    2SB1499A    B1499A    QM2601S    QM2604V   


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