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B12V105 Datasheet

Part Number B12V105
Manufacturers Bipolarics
Logo Bipolarics
Description NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
Datasheet B12V105 DatasheetB12V105 Datasheet (PDF)

www.DataSheet4U.com BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the B12V105 an excellent choice for battery appli.

  B12V105   B12V105






NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

www.DataSheet4U.com BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the B12V105 an excellent choice for battery applications. From 10 mA to greater than 25 mA, ft is nominally 10 GHz. Maximum recommended continuous current is 40 mA. A broad range of packages are offered including SOT-23, SOT143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS • Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 20 12 1.5 40 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 10 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz, I C = 10 mA I C = 25 mA f = 2.0 GHz, I C = 10 mA IC = 25 mA f = 1.0 GHz f .


2006-12-29 : 05W580EWC    2MBI100U4A-120    2MBI100UA-120    2MBI200U2A-060    2MBI200U4B-120    2MBI200UC-120    2MBI300UE-120    2MBI450UE-120    30SPA0553    6R1MBI100P-160   


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