Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD1707
Unit: mm
s Fe...
Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD1707
Unit: mm
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –130 –80 –7 –30 –20 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
21.0±0.5 15.0±0.2
Low collector to emitter saturation
voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw
0.7
15.0±0.3 11.0±0.2
5.0±0.2 3.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –10A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A VCE = –10V, IC = – 0.5A, f = 10MHz IC = –3A, IB1 = – 0.8A, IB2 = 0.8A, VCC = –50V 25 0.5 1.2 0.2 –80 45 90 30 – 0.5 –1.5 –1.5 –2.5 V V ...
