B1116A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP) TO-92 FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 2SB1116 2SB1116A Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Base -emitter voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time CLASSIFICATION OF hFE(1) Rank L V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob ton ts tf IC=-1mA,IB=0 2SB1116 2SB1116A IE=-100μA,IC=0 VCB=-60V,IE=0 2SB1116 VCB=-80V,IE=0 2SB1116A VEB=-6V,IC=0 VCE=-2V,IC=-0.1A VCE=-2V,IC=-1A IC=-1A,IB=-50mA IC=-1A,IB=-50mA VCE=-2V,IC=-0.05A VCE=-2V,IC=-0.1A VCB=-10V,IE=0,f=1MHz VCC=-10V,IC=-...