INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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