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B1032 Datasheet

Part Number B1032
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SB1032
Datasheet B1032 DatasheetB1032 Datasheet (PDF)

2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 1 1.0 kΩ (Typ) 200 Ω (Typ) 3 ID 2SB1032(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC =.

  B1032   B1032






Part Number B1038
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon PNP Power Transistor
Datasheet B1032 DatasheetB1038 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuou.

  B1032   B1032







Part Number B1037
Manufacturers Sanyo
Logo Sanyo
Description 2SB1037
Datasheet B1032 DatasheetB1037 Datasheet (PDF)

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features · High allowable collector dissipation (PC=2W). · Wide ASO. Package Dimensions unit:mm 2010C [2SB1037/2SD1459] ( ) : 2SB1037 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO I.

  B1032   B1032







Part Number B1031
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SB1031
Datasheet B1032 DatasheetB1031 Datasheet (PDF)

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  B1032   B1032







Part Number B1030
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SB1030
Datasheet B1032 DatasheetB1030 Datasheet (PDF)

Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A s Features q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Sy.

  B1032   B1032







2SB1032

2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 1 1.0 kΩ (Typ) 200 Ω (Typ) 3 ID 2SB1032(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) ID*1 PC * 1 Tj Tstg Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage –120 Emitter to base breakdown voltage V(BR)EBO –7 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ IE = –200 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 ID = 10 A*1 VCC = –30 V, IC = –5 A, IB1 = –IB2 = –10 mA 2 .


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