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B1020X

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes B1020X SCHOTTKY BARRIER DIODE SO...


JCET

B1020X

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes B1020X SCHOTTKY BARRIER DIODE SOD-523 FEATURES  Low Forward Voltage Drop  Surface Mount Package Ideally Suited For Automatic Insertion MARKING: L6 L6 L6 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VRRM VRWM VR VR(RMS) IFM Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current IFSM PD RθJA Tj Non-repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction temperature Tstg Storage Temperature Limit 20 14 1.0 4 150 667 125 -55 ~ +150 Unit V V A A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Parameter Symbol Test Condition Reverse breakdown voltage V(BR) IR=250μA Reverse current VR=10V IR VR=20V Forward voltage Capacitance between terminals IF=10mA VF IF=100mA IF=1A CT VR= 0V,f=1MHz Min Typ Max 20 80 100 0.23 0.305 0.50 120 Unit V μA μA V V V pF www.cj-elec.com 1 A-1,May,2016 Typical Characteristics 1000 Pulsed Forward Characteristics 100 T a =100 oC FORWARD CURRENT I (mA) F 10 oC =25 T a 1 0.1 0.0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE V (V) F 0.6 REVERSE CURRENT I (uA) R 10000 Pulsed 1000 Reverse Characteristics T =100 oC a 100 10 T =25 oC a 1 0 4 8 12 16...




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