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Manufacture Part Number Description PDF
Toshiba
Toshiba
B1016A 2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications

2SB1016A
Unit: mm

• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (s
B1016A pdf





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