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Manufacture Part Number Description PDF
ETC
ETC
B1016 2SB1016
2SB1016

PNP EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT


SC-67

!

Complement to 2SD1407

ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector
B1016 pdf
Toshiba
Toshiba
B1016A 2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications

2SB1016A
Unit: mm

• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (s
B1016 pdf





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