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B09N03

Excelliance MOS

N-Channel Logic Level Enhancement Mode Field Effect Transistor


Description
  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  9mΩ  ID  50A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMB09N03H LIMITS  UNIT  Gate‐Source Voltage  Contin...



Excelliance MOS

B09N03

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