AWT6270

www.DataSheet4U.com AWT6270 HELP TM 830-840 MHz WCDMA 3.4V/27dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES InGaP HBT Technology High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.61 mm Max AWT6270 APPLICATIONS Dual Band WCDMA Wireless Handsets M7 Package 10 Pin 4 mm x 4 mm x 1.6 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6270 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.6 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VREF VMODE 1 2 Bias Control 10 9 8 7 6 GND GND RFOUT GND VCC GND 3 RFIN VCC 4 5 Figure 1: Block Diagram 01/2005 AWT6270 www.DataSheet4U.com GND VREF 1 VMODE 2 GND 3 RFIN VCC 4 5 GND Figure 2: Pinout (X-ray Top ...