AW002R2-12

GaAs SPDT IC 10 Watt T/R Switch DC–2.5 GHz AW002R2-12 Features s T/R Switch s High Isolation (30 dB @ 0.9 GHz) s Designed for Mobile Radio Applications s P-1 dB ≥ 10 W @ 0.9 GHz s High Intercept Point (IP3 +63 dBm,@ 0.9 GHz) PIN 1 INDICATOR 0.244 (6.20 mm) 0.228 (5.80 mm) SOIC-8 PIN 8 0.050 (1.27 mm) BSC PIN 1 0.068 (1.73 mm) MAX. 0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45˚ CHAMFER Description The AW002R2-12 is a high power IC FET SPDT switch in a plastic SOIC-8 package. This switch has been designed for use where extremely high linearity is required. It can be controlled with positive, negative or a combination of both voltages. Some standard implementations include antenna changeover, T/R and diversity switching over 2 W. This switch can be used in many analog and digital wireless communication systems including cellular, GSM and PCS applications. 0.197 (5.00 mm) 0.189 (4.80 mm) 0.010 (0.25 mm) 0.004 (0.10 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 8˚ MAX. Electrical Specifications at 25°C (0, -5 V) Parameter1 Insertion Loss3 Frequency2 DC–0.5 GHz DC–1.0 GHz DC–2.5 GHz DC–0.5 GHz DC–1.0 GHz DC–2.5 GHz DC–1.0 GHz DC–2.5 GHz 33 28 20 Min. Typ. 0.7 0.8 1.0 37 30 22 1.2:1 1.5:1 1.4:1 1.7:1 Max. 0.8 0.9 1.1 Unit dB dB dB dB dB dB dB dB Isolation VSWR4 Operating Characteristics at 25°C (0, -5 V) Parameter Switching Characteristics5 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Vide...