AUTOMOTIVE GRADE
AUIRF7379Q
Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Du...
AUTOMOTIVE GRADE
AUIRF7379Q
Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel
MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified *
N-CHANNEL
MOSFET
N-CH P-CH
S1 1 G1 2
8 D1 7 D1
VDSS
30V -30V
S2 3
6 D2 RDS(on) typ. 0.038 0.070
G2 4
5 D2
max. 0.045 0.090
P-CHANNEL
MOSFET
ID
5.8A -4.3A
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive...