AUIRF7342Q

  AUTOMOTIVE GRADE AUIRF7342Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) max. ID Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. SO-8 AUIRF7342Q G Gate D Drain -55V 0.105 -3.4A S Source Base part number AUIRF7342Q Package Type SO-8 Standard Pack Form Quantity Tape ...