ATP106

Ordering number : ENA1597A ATP106 P-Channel Power MOSFET –40V, –30A, 25mΩ, Single ATPAK http://onsemi.com Features Low ON-resistance Slim package Halogen free compliance Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--10V, L=200μH, IAV=--15A *2 L≤200μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --40 ±20 --30 --90 40 150 --55 to +150 30 --15 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses ab...