ATF-511P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago...
ATF-511P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-511P8 is a single-
voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a high linearity, low-noise, mediumpower amplifier. Its operating frequency range is from 50 MHz to 6 GHz.
The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested.
Notes: 1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate
voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin Connections and Package Marking
Source (Thermal/RF Gnd)
Pin 8 Pin 7 (Drain)
Pin 6 Pin 5
Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source)
Bottom View Pin 1 (Source)
Pin 8
Pin 2 (Gate) Pin 3
Pin 4 (Source)
1Px
Top View
Pin 7 (Drain) Pin 6 Pin 5
Note: Package marking provides orientation and identification: “1P” = Device Code “x” = Date code indicates the month of manufacture.
Features
Single
voltage operat...