0.5-10 GHz General Purpose Gallium Arsenide FET
Description
0.5–10 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-25735
Features
High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz
High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz
Low Noise Figure: 1.2 dB Typical at 4 GHz
Cost Effective Ceramic Microstrip Package
Description
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate fi...
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