AT68166G

Features 16 www.DataSheet4U.com Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F – <18 ns for AT68166G (in development prototypes in Q4 2007) Power Consumption – Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns (1) – Standby: 13 mW (Typ) Military Temperature Range: -55 to +125°C TTL-Compatible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 ESD Better than 4000V Quality Grades: – QML-Q or V with SMD 5962-06229 – ESCC 950 Mils Wide MQFP 68 Package Mass : 8.5 grams 1. Only for AT68166F-18. 450mW for AT68166F-20. Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module AT68166F AT68166G Note: Description The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166F/G MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM packaging technology allows a reduction of the PCB area by 50% with a weight savings of 75% compared to four 4Mbit packages. T...