AT49F040B

www.DataSheet4U.com Features Single Supply for Read and Write: 4.5 to 5.5V Fast Read Access Time – 55 ns Internal Program Control and Timer Flexible Sector Architecture – One 16K Bytes Boot Sector with Programming Lockout – Two 8K Bytes Parameter Sectors – Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes) Fast Erase Cycle Time – 8 Seconds Byte-by-Byte Programming – 12 µs/Byte Typical Hardware Data Protection DATA Polling or Toggle Bit for End of Program Detection Low Power Dissipation – 20 mA Active Current – 25 µA CMOS Standby Current Minimum 100,000 Write Cycles 4-megabit (512K x 8) 5-volt Only Flash Memory AT49F040B 1. Description The AT49F040B is a 5-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 110 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 25 µA. To allow for simple in-system reprogrammability, the AT49F040B does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49F040B is performed by erasing a sector of data and then programming on a byte...