AT49BV642D

Features www.DataSheet4U.com Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Architecture – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout – Eight 4K Word Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 10 mA Active – 15 µA Standby Data Polling and Toggle Bit for End of Program Detection VPP Pin for Write Protection and Accelerated Program Operations RESET Input for Device Initialization Sector Lockdown Support TSOP Package Top or Bottom Boot Block Configuration Available 128-bit Protection Register Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging 64-megabit (4M x 16) 3-volt Only Flash Memory AT49BV642D AT49BV642DT 1. Description The AT49BV642D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device can be read or reprogrammed off a single 2.7V power supply, making it ideally suited for in-system programming. To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature...