DatasheetsPDF.com

AT49BV161T Datasheet

Part Number AT49BV161T
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description (AT49xV160 / AT49xV161) Flash Memory
Datasheet AT49BV161T DatasheetAT49BV161T Datasheet (PDF)

www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector.

  AT49BV161T   AT49BV161T






Part Number AT49BV1614T
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Datasheet AT49BV161T DatasheetAT49BV1614T Datasheet (PDF)

Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout • Fast Word Program Time - 20 µs • Fast Sector Erase Time - 200 ms • Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Pla.

  AT49BV161T   AT49BV161T







Part Number AT49BV1614AT
Manufacturers ATMEL
Logo ATMEL
Description 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Datasheet AT49BV161T DatasheetAT49BV1614AT Datasheet (PDF)

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout • Fast Word Program Time – 20 µs • Fast Sector Erase Time – 300 ms • Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 3.

  AT49BV161T   AT49BV161T







Part Number AT49BV1614A
Manufacturers ATMEL
Logo ATMEL
Description 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Datasheet AT49BV161T DatasheetAT49BV1614A Datasheet (PDF)

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout • Fast Word Program Time – 20 µs • Fast Sector Erase Time – 300 ms • Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 3.

  AT49BV161T   AT49BV161T







Part Number AT49BV1614
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Datasheet AT49BV161T DatasheetAT49BV1614 Datasheet (PDF)

Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout • Fast Word Program Time - 20 µs • Fast Sector Erase Time - 200 ms • Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Pla.

  AT49BV161T   AT49BV161T







(AT49xV160 / AT49xV161) Flash Memory

www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word by Suspending Programming of Any Other Byte/Word Low-power Operation – 30 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register • • • • • • • • 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory AT49BV160 AT49LV160 AT49BV160T AT49BV161 AT49LV161 AT49BV161T AT49LV161T Description The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA packages. The device has CE and OE control signals to avoid any bu.


2006-12-04 : A64S16161    5HP02N    5LN01C    5LN01M    5LN01N    5LN01SP    5LN01SS    5LN02C    5LN02M    5LN02N   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)