AT28C17
Features
• • • • • • • • • •
Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte W...
AT28C17
Features
Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output Low Power 30 mA Active Current 100 µa
CMOS Standby Current High Reliability Endurance: 104 or 105 Cycles Data Retention: 10 Years 5V ± 10% Supply
CMOS & TTL Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges
16K (2K x 8)
CMOS E2PROM
Description
The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile
CMOS technology. (continued)
Pin Configurations
Pin Name A0 - A10 CE OE WE I/O0 - I/O7 RDY/BUSY NC DC Function Addresses Chip Enable Output Enable Write Enable
AT28C17
Data Inputs/Outputs Ready/Busy Output No Connect Don’t Connect
PDIP, SOIC Top View
PLCC Top View
Note: PLCC package pins 1 and 17 are DON’T CONNECT.
0541A
2-183
Description (Continued)
The AT28C17 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, th...