Features
Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle
– Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – DATA POLLING Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Dat...
