Features
• 2.7V to 3.6V Supply – Full Read and Write Operation
• Low Power Dissipation – 8 mA Active Current – 50 µA CMO...
Features
2.7V to 3.6V Supply – Full Read and Write Operation
Low Power Dissipation – 8 mA Active Current – 50 µA
CMOS Standby Current
Read Access Time – 300 ns Byte Write – 3 ms Direct Microprocessor Control
– DATA Polling – READY/BUSY Open Drain Output High Reliability
CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years JEDEC Approved Byte-Wide Pinout Industrial Temperature Ranges
64K (8K x 8) Battery-
Voltage Parallel EEPROMs
1. Description
The AT28BV64 is a low-
voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the device offers access times to 200 ns with power dissipation less than 30 mW. When the device is deselected the standby current is less than 50 µA.
The AT28BV64 is accessed like a Static RAM for the read o...
